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1

The dependence of the angle of attack of the flame on the design parameters of the port uptake

V. Ya. Dzyuzer, A. S. Kozlov, N. I. Kokarev, K. A. Pchelyakov, V. A. Sibiryakov

Journal:

Glass and Ceramics

Year:

1976

Language:

english

File:

PDF, 266 KB

english, 1976

2

Molecular beam epitaxial growth of germanium and silicon films: Surface structure, film defects and properties

A.V. Rzhanov, S.I. Stenin, O.P. Pchelyakov, B.Z. Kanter

Journal:

Thin Solid Films

Year:

1986

Language:

english

File:

PDF, 446 KB

english, 1986

3

Continuous process foe melting and working lead crystal tableware

N. F. Mokhnin, I. A. Figurovskii, G. V. Savonichev, V. A. Zubanov, N. A. Yudin, K. A. Pchelyakov, D. I. Klegg, Z. M. Syritskaya

Journal:

Glass and Ceramics

Year:

1970

Language:

english

File:

PDF, 282 KB

english, 1970

4

Calculating the parameters of glass currents in the tank, feeder or working channel of a tank furnace

K. A. Pchelyakov, A. A. Sokolov

Journal:

Glass and Ceramics

Year:

1965

Language:

english

File:

PDF, 287 KB

english, 1965

5

Potential and temperature fields in an electrically heated feeder

S. K. Pchelyakov, V. N. Fekolin

Journal:

Glass and Ceramics

Year:

1982

Language:

english

File:

PDF, 371 KB

english, 1982

6

Potentialities and basic principles of controlling the plastic relaxation of GeSi/Si and Ge/Si films with stepwise variation in the composition

Yu. B. Bolkhovityanov, A. K. Gutakovskii, A. S. Deryabin, O. P. Pchelyakov, L. V. Sokolov

Journal:

Year:

2008

Language:

english

File:

PDF, 571 KB

english, 2008

7

New technique for heterogeneous vapor-phase synthesis of nanostructured metal layers from low-dimensional volatile metal complexes

A. M. Badalyan, L. F. Bakhturova, V. V. Kaichev, O. V. Polyakov, O. P. Pchelyakov, G. I. Smirnov

Journal:

Technical Physics

Year:

2011

Language:

english

File:

PDF, 349 KB

english, 2011

8

Ge and GexSi1 − x islands formation on GexSi1 − x solid solution surface

A.I. Nikiforov, V.A. Timofeev, S.A. Teys, A.K. Gutakovsky, O.P. Pchelyakov

Journal:

Thin Solid Films

Year:

2012

Language:

english

File:

PDF, 537 KB

english, 2012

9

Reflection high energy electron diffraction studies on SixSnyGe1−x−y on Si(100) molecular beam epitaxial growth

Nikiforov, A.I., Mashanov, V.I., Timofeev, V.A., Pchelyakov, O.P., Cheng, H.-H.

Journal:

Thin Solid Films

Year:

2014

Language:

english

File:

PDF, 395 KB

english, 2014

10

Photodiode properties of molecular beam epitaxial InSb on a heavily doped substrate

Sun, Weiguo, Fan, Huitao, Peng, Zhenyu, Zhang, Liang, Zhang, Xiaolei, Zhang, Lei, Lu, Zhengxiong, Si, Junjie, Emelyanov, E., Putyato, M., Semyagin, B., Pchelyakov, O., Preobrazhenskii, V.

Journal:

Infrared Physics & Technology

Year:

2014

Language:

english

File:

PDF, 743 KB

english, 2014

11

Performance improvement mechanisms of pyramid-like via hole recessed GaAs-based solar cells grown on Si wafer

Tseng, Chun-Yen, Lee, Ching-Ting, Pchelyakov, Oleg P., Preobrazhenskii, Valerii V.

Journal:

Year:

2015

Language:

english

File:

PDF, 1.38 MB

english, 2015

12

State-of-the-art Architectures and Technologies of High-Efficiency Solar Cells Based on III–V Heterostructures for Space and Terrestrial Applications

Pakhanov, N. A., Andreev, V. M., Shvarts, M. Z., Pchelyakov, O. P.

Journal:

Optoelectronics, Instrumentation and Data Processing

Year:

2018

Language:

english

File:

PDF, 1.60 MB

english, 2018

13

Electron Beam Induced Changes of the Real Structure of Semiconductors

Dr. A. L. Aseev, V. M. Astakhov, O. P. Pchelyakov, Prof. Dr. J. Heydenreich, Dr. G. Kästner, D. Hoehl

Journal:

Crystal Research and Technology

Year:

1979

Language:

english

File:

PDF, 553 KB

english, 1979

14

115 fs pulses from Yb3+:KY(WO4)2 laser with low loss nanostructured saturable absorber

A.A. Kovalyov, V.V. Preobrazhenskii, M.A. Putyato, O.P. Pchelyakov, N.N. Rubtsova, B.R. Semyagin, V.E. Kisel', S.V. Kuril'chik, N.V. Kuleshov

Journal:

Laser Physics Letters

Year:

2011

Language:

english

File:

PDF, 120 KB

english, 2011

15

Heteroepitaxy of germanium thin films on silicon by ion sputtering

L.N. Aleksandrov, R.N. Lovyagin, O.P. Pchelyakov, S.I. Stenin

Journal:

Journal of Crystal Growth

Year:

1974

Language:

english

File:

PDF, 958 KB

english, 1974

16

Direct observation of the atomic structure of interfaces in the systems Si-SiO2 and Ge-GeO2

M. Pasemann, O.P. Pchelyakov

Journal:

Journal of Crystal Growth

Year:

1982

Language:

english

File:

PDF, 167 KB

english, 1982

17

Molecular beam epitaxy with synchronization of nucleation

V.A. Markov, O.P. Pchelyakov, L.V. Sokolov, S.I. Stenin, S. Stoyanov

Journal:

Surface Science Letters

Year:

1991

Language:

english

File:

PDF, 74 KB

english, 1991

18

Undamped RHEED oscillations during Si and Ge homoepitaxy

V.A. Markov, O.P. Pchelyakov, L.V. Sokolov, S.I. Stenin, S. Stoyanov

Journal:

Superlattices and Microstructures

Year:

1991

Language:

english

File:

PDF, 284 KB

english, 1991

19

Features of surface recovery behavior during interfaces formation in superlattices grown by MBE

L.Yu. Golobokova, V.A. Markov, O.P. Pchelyakov, Z.Sh. Yanovitskaya

Journal:

Superlattices and Microstructures

Year:

1991

Language:

english

File:

PDF, 232 KB

english, 1991

20

Raman scattering from SiSi0.5Ge0.5 (111) superlattices

A.B. Talochkin, V.A. Markov, Yu.A. Pusep, O.P. Pchelyakov, M.P. Sinyukov

Journal:

Superlattices and Microstructures

Year:

1991

Language:

english

File:

PDF, 281 KB

english, 1991

21

MBE growth of ultra small coherent Ge quantum dots in silicon for applications in nanoelectronics

O.P. Pchelyakov, A.I. Nikiforov, B.Z. Olshanetsky, S.A. Teys, A.I. Yakimov, S.I. Chikichev

Journal:

Journal of Physics and Chemistry of Solids

Year:

2008

Language:

english

File:

PDF, 498 KB

english, 2008

22

Wetting layer formation in superlattices with Ge quantum dots on Si(1 0 0)

A.I. Nikiforov, V.V. Ulyanov, V.A. Timofeev, O.P. Pchelyakov

Journal:

Microelectronics Journal

Year:

2009

Language:

english

File:

PDF, 190 KB

english, 2009

23

Germanium nanoislands formation on silicon oxide surface by molecular beam epitaxy

A.I. Nikiforov, V.V. Ulyanov, O.P. Pchelyakov, S.A. Teys, A.K. Gutakovsky

Journal:

Materials Science in Semiconductor Processing

Year:

2005

Language:

english

File:

PDF, 386 KB

english, 2005

24

Ge dots on Si (1 1 1) and (1 0 0) surfaces with SiO2 coverage: Raman study

V.A Volodin, M.D Efremov, D.A Orekhov, A.I Nikiforov, O.P Pchelyakov, V.V Ulyanov, A.I Yakimov, A.V Dvurechenskii

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2004

Language:

english

File:

PDF, 197 KB

english, 2004

25

Interband photoconductivity of Ge/Si structures with self-organized quantum rings

O.A. Shegai, V.I. Mashanov, H.-H. Cheng, O.P. Pchelyakov

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2009

Language:

english

File:

PDF, 252 KB

english, 2009

26

Photoconductivity of Si/Ge/Si structures with 1.5 and 2 ML of Ge layer

O.A. Shegai, V.I. Mashanov, A.I. Nikiforov, V.V. Ulyanov, O.P. Pchelyakov

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2010

Language:

english

File:

PDF, 214 KB

english, 2010

27

The influence of elastic strains on the growth and properties of vertically ordered Ge “hut”-clusters

A.I. Nikiforov, V.V. Ulyanov, S.A. Teys, A.K. Gutakovsky, O.P. Pchelyakov

Journal:

Thin Solid Films

Year:

2008

Language:

english

File:

PDF, 187 KB

english, 2008

28

InGaAsP/InGaP superlattices by conventional MBE with molten metal solution phosphorus source

M.A Putyato, V.V Preobrazhenskii, B.R Semyagin, Yu.B Bolkhovityanov, A.M Gilinsky, A.K Gutakousky, M.A Revenko, O.P Pchelyakov, D.F Feklin

Journal:

Journal of Crystal Growth

Year:

2003

Language:

english

File:

PDF, 351 KB

english, 2003

29

In situ RHEED control of direct MBE growth of Ge quantum dots on Si (0 0 1)

V.A. Markov, A.I. Nikiforov, O.P. Pchelyakov

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 294 KB

english, 1997

30

Experimental determination of the incorporation factor of As4 during molecular beam epitaxy of GaAs

V.V Preobrazhenskii, M.A Putyato, O.P Pchelyakov, B.R Semyagin

Journal:

Journal of Crystal Growth

Year:

1999

Language:

english

File:

PDF, 119 KB

english, 1999

31

Effect of Ga predeposition layer on the growth of GaAs on vicinal Ge(0 0 1)

A.K Gutakovsky, A.V Katkov, M.I Katkov, O.P Pchelyakov, M.A Revenko

Journal:

Journal of Crystal Growth

Year:

1999

Language:

english

File:

PDF, 122 KB

english, 1999

32

Surface structure transitions on (0 0 1) GaAs during MBE

V.V Preobrazhenskii, M.A Putyato, O.P Pchelyakov, B.R Semyagin

Journal:

Journal of Crystal Growth

Year:

1999

Language:

english

File:

PDF, 108 KB

english, 1999

33

Molecular beam epitaxy of silicon–germanium nanostructures

O.P Pchelyakov, Yu.B Bolkhovityanov, A.V Dvurechenskii, A.I Nikiforov, A.I Yakimov, B Voigtländer

Journal:

Thin Solid Films

Year:

2000

Language:

english

File:

PDF, 929 KB

english, 2000

34

RHEED studies of nucleation of Ge islands on Si(001) and optical properties of ultra-small Ge quantum dots

V.A. Markov, H.H. Cheng, Chih-ta Chia, A.I. Nikiforov, V.A. Cherepanov, O.P. Pchelyakov, K.S. Zhuravlev, A.B. Talochkin, E. McGlynn, M.O. Henry

Journal:

Thin Solid Films

Year:

2000

Language:

english

File:

PDF, 262 KB

english, 2000

35

In situ RHEED control of self-organized Ge quantum dots

A.I. Nikiforov, V.A. Cherepanov, O.P. Pchelyakov, A.V. Dvurechenskii, A.I. Yakimov

Journal:

Thin Solid Films

Year:

2000

Language:

english

File:

PDF, 1.44 MB

english, 2000

36

Solid solutions GeSi grown by MBE on a low temperature Si (001) buffer layer: specific features of plastic relaxation

Yu.B Bolkhovityanov, A.K Gutakovskii, V.I Mashanov, O.P Pchelyakov, M.A Revenko, L.V Sokolov

Journal:

Thin Solid Films

Year:

2001

Language:

english

File:

PDF, 1.56 MB

english, 2001

37

Surface processes and phase diagrams in MBE growth of SiGe heterostuctures

O.P. Pchelyakov, V.A. Markov, A.I. Nikiforov, L.V. Sokolov

Journal:

Thin Solid Films

Year:

1997

Language:

english

File:

PDF, 958 KB

english, 1997

38

Formation of zero-dimensional hole states in Ge/Si heterostructures probed with capacitance spectroscopy

A.I Yakimov, A.V Dvurechenskii, A.I Nikiforov, O.P Pchelyakov

Journal:

Thin Solid Films

Year:

1998

Language:

english

File:

PDF, 244 KB

english, 1998

39

The influence of growth temperature on the period of RHEED oscillations during MBE of Si and Ge on Si(111) surface

A.I. Nikiforov, V.A. Markov, V.A. Cherepanov, O.P. Pchelyakov

Journal:

Thin Solid Films

Year:

1998

Language:

english

File:

PDF, 287 KB

english, 1998

40

RHEED investigation of limiting thickness epitaxy during low-temperature Si-MBE on (100) surface

A.I Nikiforov, B.Z Kanter, O.P Pchelyakov

Journal:

Thin Solid Films

Year:

1998

Language:

english

File:

PDF, 226 KB

english, 1998

41

Oscillation of in-plane lattices constant of Ge islands during molecular beam epitaxy growth on Si

A.I Nikiforov, V.A Cherepanov, O.P Pchelyakov

Journal:

Materials Science and Engineering: B

Year:

2002

Language:

english

File:

PDF, 200 KB

english, 2002

42

Nanostructured multilayer metal/por-Si structures based on CoSi2 film: optical and electronic properties

Igor Belousov, Oleg Pchelyakov, Sergey Romanov, Nina Kovtyukhova, Sergiy Putselyk, Konstantin Yakovkin, Danila Zherebetskiy, Alexsander Gorchinskiy, Galina Popova, Eugenia Buzaneva

Journal:

Materials Science and Engineering: C

Year:

2002

Language:

english

File:

PDF, 136 KB

english, 2002

43

Phonons in self-assembled Ge/Si structures

A.G Milekhin, A.I Nikiforov, O.P Pchelyakov, S Schulze, D.R.T Zahn

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2002

Language:

english

File:

PDF, 105 KB

english, 2002

44

Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy

Vladimir Mashanov, Vladimir Ulyanov, Vyacheslav Timofeev, Aleksandr Nikiforov, Oleg Pchelyakov, Ing-Song Yu, Henry Cheng

Journal:

Nanoscale Research Letters

Year:

2011

Language:

english

File:

PDF, 852 KB

english, 2011

45

Silicon homoepitaxy with ion sputtering. I. Mechanism of growth

O. P. Pchelyakov, R. N. Lovyagin, E. A. Krivorotov, A. I. Toropov, L. N. Aleksandrov, S. I. Stenin

Journal:

physica status solidi (a)

Year:

1973

Language:

english

File:

PDF, 1.93 MB

english, 1973

46

Silicon homoepitaxy with ion sputtering. II. Formation of defects

O. P. Pchelyakov, R. N. Lovyagin, A. I. Toropov, S. I. Stenin

Journal:

physica status solidi (a)

Year:

1973

Language:

english

File:

PDF, 1.29 MB

english, 1973

47

Structure of SiO2 pyrolitic films on Ge substrates

O. P. Pchelyakov, E. B. Gorokhov, S. V. Pokrovskaya, L. V. Sokolov, S. I. Stenin

Journal:

physica status solidi (a)

Year:

1977

Language:

english

File:

PDF, 586 KB

english, 1977

48

Analysis of rod-like defects in silicon and germanium by means of high-resolution electron microscopy

M. Pasemann, D. Hoehl, A. L. Aseev, O. P. Pchelyakov

Journal:

physica status solidi (a)

Year:

1983

Language:

english

File:

PDF, 934 KB

english, 1983

49

Formation of Ge nanoislands on pure and oxidized Si surfaces by MBE

A. I. Nikiforov, V. V. Ulyanov, A. G. Milekhin, O. P. Pchelyakov, S. A. Teys, S. Schulze, D. R. T. Zahn

Journal:

physica status solidi (c)

Year:

2004

Language:

english

File:

PDF, 593 KB

english, 2004

50

MBE growth of vertically ordered Ge quantum dots on Si

A. I. Nikiforov, V. V. Ulyanov, S. A. Teys, A. K. Gutakovsky, O. P. Pchelyakov, A. I. Yakimov, A. Fonseca, J. P. Leitão, N. A. Sobolev

Journal:

physica status solidi (c)

Year:

2007

Language:

english

File:

PDF, 315 KB

english, 2007

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